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| savantic semiconductor product specification silicon npn power transistors 2SC3153 d escription with to-3pn package high breakdown voltage (v c bo 900v) fast switching speed wide asosafe operating area applications 800v/6a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 6 a i cm collector current-peak 20 a i b base current 3 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3153 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = < 800 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6a 2.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.6a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.4a ; v ce =5v 10 40 h fe -2 dc current gain i c =2a ; v ce =5v 8 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf f t transition frequency i c =0.4a ; v ce =10v 15 mhz switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c =4a;i b1 =0.8a;i b2 =-1.6a r l =100 e ,v cc =400v 0.7 s h fe-1 classifications k l m 10-20 15-30 20-40 savantic semiconductor product specification 3 silicon npn power transistors 2SC3153 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC3153 |
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